Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template  

作　　者：姜威 高红 徐玲玲 马佳宁 张锷 魏平 林家齐 

机构地区：[1]Heilongjiang Key Laboratory for Low-Dimensional System and Mesoscopic Physics,School of Physics and Electronic Engineering,Harbin Normal University [2]Harbin University of Science and Technology

出　　处：《Chinese Physics B》2011年第3期416-419,共4页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nso. 60776010,60940021 and 11074060);the Natural Science Foundation of Heilongjiang Province,China (Grant No. A2008-07);the Doctoral Start-up Fund of Harbin Normal University,China

摘　　要：Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes （λ= 505 nm, 460 nm, 375 nm） as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device.Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes （λ= 505 nm, 460 nm, 375 nm） as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device.

关 键 词：ZnO nanowire OPTOELECTRONIC micro-grid template 

分 类 号：O482.7[理学—固体物理]