Room-temperature anomalous Hall effect and magnetroresistance in(Ga,Co)-codoped ZnO diluted magnetic semiconductor films  被引量:1

Room-temperature anomalous Hall effect and magnetroresistance in(Ga,Co)-codoped ZnO diluted magnetic semiconductor films

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作  者:刘学超 陈之战 施尔畏 廖达前 周克谨 

机构地区:[1]Shanghai Institute of Ceramics,Chinese Academy of Sciences [2]Department of Physics,The University of Warwick,Coventry,CV4 7AL [3]Swiss Light Source,Paul Scherrer Institut,5232 Villigen PSI,Switzerland

出  处:《Chinese Physics B》2011年第3期420-425,共6页中国物理B(英文版)

基  金:supported by the National Natural Science Foundation of China (Grant No. 50772122);the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176)

摘  要:This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co2+ and Ga3+ ions substitute for Zn2+ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic (Ga, Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room tempera- ture. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co2+ and Ga3+ ions substitute for Zn2+ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic (Ga, Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room tempera- ture. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.

关 键 词:diluted magnetic semiconductors (Ga Co)-codoped ZnO anomalous Hall effect magnetroresisance 

分 类 号:O484[理学—固体物理]

 

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