Room-temperature anomalous Hall effect and magnetroresistance in(Ga,Co)-codoped ZnO diluted magnetic semiconductor films  

作　　者：刘学超 陈之战 施尔畏 廖达前 周克谨 

机构地区：[1]Shanghai Institute of Ceramics,Chinese Academy of Sciences [2]Department of Physics,The University of Warwick,Coventry,CV4 7AL [3]Swiss Light Source,Paul Scherrer Institut,5232 Villigen PSI,Switzerland

出　　处：《Chinese Physics B》2011年第3期420-425,共6页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No. 50772122);the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176)

摘　　要：This paper reports that the （Ga, Co）-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co2＋ and Ga3＋ ions substitute for Zn2＋ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic （Ga, Co）-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room tempera- ture. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.This paper reports that the （Ga, Co）-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co2＋ and Ga3＋ ions substitute for Zn2＋ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic （Ga, Co）-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room tempera- ture. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.

关 键 词：diluted magnetic semiconductors （Ga Co）-codoped ZnO anomalous Hall effect magnetroresisance 

分 类 号：O484[理学—固体物理]