Influence of Si^(4+) substitution on the temperature-dependent characteristics of Y_3Al_5O_(12):Ce  

作　　者：徐生艳 张晓松 周永亮 奚群 李岚 

机构地区：[1]Insititute of Material Physics,Tianjin University of Technology,Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education,The Tianjin Key Laboratory for Optoelectronic Materials and Devices

出　　处：《Chinese Physics B》2011年第3期450-454,共5页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China (Grant No. 6139702);the National Natural Science Foundation of China (Grant Nos. 60877029,60977035 and 60907021);the Natural Science Foundation of the Tianjin Education Committee,China (Grant No. 20071207);the Natural Science Foundation of Tianjin,China (Grant Nos. 09JCYBJC01400and 07JCYBJC06400)

摘　　要：A series of aAl5O12：Ce （YAG：Ce） phosphors doped with different Si4＋ concentrations is prepared by solid-state reaction. The temperature dependent characteristics of luminescent spectrum and decay time of Ce3＋ are investigated. With Si4＋ doped, the emission spectrum shows a blue shift clue to a decrease of the splitting of 5d levels of Ce3＋ ion. The thermal stability is greatly improved by adding Si4＋ because the activation energy AE increases from 0.1836 eV to 0.2401 eV. The study of the decay times against temperature for various doping concentrations of Si4＋ shows that the calculated nonradiative decay rate is affected by Si4＋ substitution. The results are explained by the configurational coordinate diagram.A series of aAl5O12：Ce （YAG：Ce） phosphors doped with different Si4＋ concentrations is prepared by solid-state reaction. The temperature dependent characteristics of luminescent spectrum and decay time of Ce3＋ are investigated. With Si4＋ doped, the emission spectrum shows a blue shift clue to a decrease of the splitting of 5d levels of Ce3＋ ion. The thermal stability is greatly improved by adding Si4＋ because the activation energy AE increases from 0.1836 eV to 0.2401 eV. The study of the decay times against temperature for various doping concentrations of Si4＋ shows that the calculated nonradiative decay rate is affected by Si4＋ substitution. The results are explained by the configurational coordinate diagram.

关 键 词：PHOSPHOR LUMINESCENCE temperature dependence decay time 

分 类 号：O482.31[理学—固体物理]