Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid  

作　　者：王良咏 刘波 宋志棠 刘卫丽 封松林 黄丕成 S.V Babu 

机构地区：[1]Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences [2]Department of Chemical and Bimolecular Engineering and Centre for Advanced Materials Processing,Clarkson University, Potsdam New York 13699,USA [3]Praxair Electronics,1555 Main Street,Indianapolis 46224,USA [4]Department of Chemical and Bimolecular Engineering and Centre for Advanced Materials Processing,Clarkson University,Potsdam New York 13699,USA

出　　处：《Chinese Physics B》2011年第3期497-504,共8页中国物理B（英文版）

基　　金：supported by the Center for Advanced Materials Processing (CAMP) at Clarkson University;the National Integrate Circuit Research Program of China (Grant No. 2009ZX02023-3);the National Basic Research Program of China (GrantNos. 2007CB935400,2010CB934300 and 2006CB302700);the National High Technology Development Program of China (GrantNo. 2008AA031402);the Science and Technology Council of Shanghai,China (Grant Nos. 08DZ2200700,08JC1421700 and09QH1402600);the Chinese Academy of Sciences Visiting Professorship for Senior International Scientists

摘　　要：We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre- and the post-polished wafer surfaces as well as the pre- and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre- and the post-polished wafer surfaces as well as the pre- and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.

关 键 词：chemical mechanical polishing CERIA oxide over nitride selectivity ORIGIN 

分 类 号：TN305.2[电子电信—物理电子学]