Novel high-voltage self-adaptive power device based on interface charge＊  

作　　者：Wu Li-Juan Hu Sheng-Dong Zhang Bo Li Zhao-Ji 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China, Chengdu 610054, China [2]College of Communication Engineering, Chengdu University of Information Technology, Chengdu 610225, China [3]College of Communication Engineering, Chongqing University, Chongqing 400044, China

出　　处：《Chinese Physics B》2011年第2期408-415,共8页中国物理B（英文版）

基　　金：Projects supported by the National Natural Science Foundation of China （Grant Nos. 60806025 and 60976060）, the National Laboratory of Analog Integrated Circuit （Grant No. 9140C0903070904）, and the Youth Teacher Foundation of the University of Electroniq Science and Technology of China （Grant No. ix0721）.

摘　　要：This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.

关 键 词：self-adaptive interface charge inversion holes dielectric layer electric field breakdown voltage 

分 类 号：TN432[电子电信—微电子学与固体电子学] TP18[自动化与计算机技术—控制理论与控制工程]