Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method  

作　　者：张光沉 冯士维 周舟 李静婉 郭春生 

机构地区：[1]School of Electronic Information and Control Engineering,Beijing University of Technology

出　　处：《Chinese Physics B》2011年第2期434-439,共6页中国物理B（英文版）

基　　金：supported by the Natural Science Foundation of Beijing,China (Grant No. 4092005);the National High Technology Research and Development Program of China (Grant No. 2009AA032704);the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20091103110006)

摘　　要：The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the A1GaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger A1GaN/GaN HEMT with 400μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged A1GaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip- level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the A1GaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger A1GaN/GaN HEMT with 400μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged A1GaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip- level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.

关 键 词：high electron mobility transistor self-heating effect structure function RELIABILITY 

分 类 号：TN32[电子电信—物理电子学] TP391.1[自动化与计算机技术—计算机应用技术]