一种指数掺杂的砷化镓平面肖特基变容二极管的设计与制作  

Design and Fabrication of GaAs Planar Schottky Varactor Diode with the Exponential Doping Structure

作　　者：田超[1] 杨浩[1] 董军荣[1] 黄杰[1] 张海英[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2011年第1期29-32,共4页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助项目(60806024)

摘　　要：利用标准微电子工艺研制出了一种可以应用于微波倍频电路中的肖特基势垒变容二极管,采用平面结构的制作工艺,克服了传统制作工艺的不易集成的缺点。并且在N型层的掺杂浓度呈指数规律,使变容管的变容比高于传统的均匀掺杂结构,有利于提高倍频电路的工作频率和输出功率。采用台面隔离工艺以形成分别用于制作肖特基接触和欧姆接触的两个台面。经过测试,得到-6V～0.5V电压下的电流特性和-4V～0.2V电压下的电容特性曲线。变容比高达2.3。A GaAs planar schottky varactor diode with the exponential doping structure has been successfully developed to use as a non-linear device,which can be applied in the transmission line for frequency multiplying.The doping density of the N-type active layer followed the exponential way,and then we can get a higher value of the ratio of varying capacitance than that of the structure of N-type layer with homogeneous doping,which can finally increase the operating frequency and the output power of the frequency multiplier circuit.Formation of the mesas,which were respectively used to form the schottky contact and the ohmic contact,is facilitated by a mesa isolation technology.The test of the characters shows that the varactor we have fabricated has a capacitance variable ratio of 2.3,and has a good schottky contact.

关 键 词：砷化镓 变容管 指数掺杂 肖特基结 

分 类 号：TN385[电子电信—物理电子学]