一种考虑自热效应的AlGaN/GaN HEMT大信号模型  

An Improved Large-signal Model of AlGaN/GaN HEMT Considering Self-heating Effect

作　　者：王林[1] 王燕[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《固体电子学研究与进展》2011年第1期13-15,75,共4页Research & Progress of SSE

基　　金：国家重点基础研究专项基金资助项目(2010CB327504)

摘　　要：当AlGaN/GaN HEMT输出高功率密度时,器件沟道温度的升高将引起电流的下降(自热效应)。提出了一种针对AlGaN/GaN HEMT改进的大信号等效电路模型,考虑了HEMT自热效应,建立了一种改进的大信号I-V特性模型,仿真结果与测试结果符合较好,提高了大信号模型的精度。The high power operation of AlGaN/GaN HEMTs may result in high junction temperature in the conduction channel and output current decreasing,which is commonly known as the self-heating effect.Based on an improved AlGaN/GaN HEMT large-signal model equivalent circuit,a new large-signal I-V model considering the self-heating effect has been presented in this paper.A good agreement between the model and experimental results is obtained.

关 键 词：铝镓氮/氮化镓异质结场效应晶体管 自热效应 等效电路 大信号模型 

分 类 号：TN386[电子电信—物理电子学]