InGaN/GaN多量子阱纳米线发光二极管制备及研究  

Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode

作　　者：曹瑞华[1] 殷垚 陈鹏[1] 万青[2] 濮林[1] 施毅[1] 郑有炓[1] 

机构地区：[1]南京大学电子信息与工程学院,南京210093 [2]湖南大学物理系,长沙410082

出　　处：《固体电子学研究与进展》2011年第1期24-28,共5页Research & Progress of SSE

基　　金：国家"973"计划项目(2007CB936300);国家自然科学基金项目(60990314);江苏省自然科学基金项目(BK2008025)

摘　　要：用SiO2纳米图形层作为模板在以蓝宝石为衬底的n-GaN单晶层上制备了InGaN/GaN多量子阱纳米线,并成功实现了其发光二极管器件(LED)。场发射扫描电子显微镜(FESEM)的测量结果表明,InGaN/GaN多量子阱纳米线具有光滑的表面形貌和三角形的剖面结构。室温下阴极射线荧光谱(CL)的测试发现了位于461 nm处的强发光峰,其峰位与多量子阱薄膜相比发生了明显的蓝移。I-V测量表明,多量子阱纳米线LED具有典型的p-n结伏安特性,在20 mA注入电流下,开启电压为4.28 V,且与多量子阱LED的绿色发光相比,其电致发光偏紫色。InGaN/GaN multi-quantum-well（MQW） nanowires and accordingly light-emitting-diodes（LEDs） were fabricated on n-GaN/sapphire substrate with a nano-patterned SiO2 film as growth mask.Field-emission scan electron microscopy（FESEM）,cathodoluminescence（CL） and I-V measurements were used to investigate the structural characteristics,optical and electrical properties.The observed results show that InGaN/GaN MQW nanowire has smooth surface morphologies and triangular cross sectional structure.A strong CL emission peak centered at around 461 nm shifts to high energy compared to the one from the sample with film MQW structure.In addition,InGaN/GaN MQW nanowire LED shows typical p-n junction characteristics with a turn-on voltage of 4.28 V at the 20 mA operation current,and its electroluminescence displays purplish compared to the green luminescence of MQW LED.

关 键 词：铟镓氮/氮化镓多量子阱纳米线 阴极射线荧光谱 发光二极管 

分 类 号：TN312.8[电子电信—物理电子学] TN305