一种0.5μm GaAs PHEMT工艺的单刀九掷射频开关芯片  

An SP9T RF Switch Design with 0.5 μm GaAs PHEMT

作　　者：郭文婷[1] 王文礼[1] 王肖莹[1] 隋文泉[1] 

机构地区：[1]浙江大学浙江加州国际纳米技术研究院,杭州310029

出　　处：《固体电子学研究与进展》2011年第1期76-80,共5页Research & Progress of SSE

摘　　要：描述一个基于0.5μm GaAs PHEMT工艺的射频开关芯片的设计实例。该开关为单刀九掷,包括GSM系统四个通信波段的两条发射通路和四条接收通路以及TD-SCDMA系统三个通信波段的三条收发通路。通过采用一种直流升压驱动电路来改善线性度,可以达到射频开关的功率容量为35 dBm,芯片的实测指标为所有通路的插入损耗不大于1.2 dB,通路之间的隔离度不小于40 dB,谐波抑制比大于66 dBc。The design of a single-pole nine-throw（SP9T） multi-band RF switch with 0.5 μm GaAs PHEMT technology for CPE of the 2nd and 3rd generation mobile communication is described in this paper.It covers both GSM and TD-SCDMA frequency bands in transceiver systems,including two transmission paths and four reception paths for GSM and three transmission-reception paths for TD-SCDMA systems.The power capacity is 35 dBm;the insertion loss of each path is less than 1.2 dB;the isolation is more than 40 dB;the harmonic suppression ratio is more than 66 dBc.DC boost has been utilized to improve the linearity.

关 键 词：单刀九掷射频开关 低插入损耗 高隔离度 高线性度 高功率 升压电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]