不同气体环境下532nm激光诱导硅表面形貌的研究  

Surface morphology of silicon induced by 532 nm nanosecond laser under different ambient atmospheres

作　　者：杨宏道[1] 李晓红[1] 李国强[1] 袁春华[1] 邱荣[1] 

机构地区：[1]西南科技大学理学院激光与光电子实验室,极端条件物质特性实验室,四川绵阳621010

出　　处：《中国光学》2011年第1期86-92,共7页Chinese Optics

基　　金：四川省教育厅资助科研项目(No.08ZB006和No.09ZA128);西南科技大学博士研究基金资助项目(No.06ZX7113)

摘　　要：研究了在不同气体环境下,利用532 nm Nd∶YAG纳秒脉冲激光累积辐照单晶硅表面形成的微结构,结果表明,在其他条件相同,背景气体不同的情况下,背景气体对硅表面形貌的形成起着重要的作用。具体分析了真空、N2和SF6 3种环境气氛下形成的微结构,结果显示,在SF6中形成的锥形微结构的数密度比在N2和真空中的大,并且锥形具有更大的纵横比;在N2、真空和SF6中形成的微结构尺寸依次减小。SF6气氛下,激光辅助化学刻蚀的效率比在真空和N2气氛中的高。另外,辐照区域边缘有波纹微结构形成,分析认为,该微结构的形成是由表面张力波的冷却导致的。The micro-structures of single crystal silicon surfaces produced by the cumulative radiation from 532 nm Nd： YAG nanosecond laser pulses were investigated under different ambient atmospheres. The results show that the ambient atmospheres have an important role on the silicon surface morphology. The microstruc- tures produced in vacuum, N2 or SF6 were analyzed in detail, it was indicated that the density of the spikes formed in SF6 is larger than those formed in N2 or vacuum, and the spikes have higher aspect ratios than those in other ambient atmospheres. Furthermore, the dimensions of the microstructures formed in SF6have decreased in turn. The experimental results suggest that efficiency of laser-induced N2, vacuum or chemical etching in SF6 atmosphere is higher than those in vacuum or N2 atmospheres. Moreover, there are ripple micro- structures formed on the edge of irradiation area, which is caused by the frozing of capillary waves.

关 键 词：激光应用 表面微处理 激光辅助化学刻蚀 硅 表面形貌 

分 类 号：TN249[电子电信—物理电子学]