高压下制备的透明低阻n-ZnO陶瓷的表征  

Characterization of the transparent n-type ZnO ceramic with low resistivity prepared under high pressure

作　　者：秦杰明[1,2] 张莹[1] 曹建明[1] 田立飞[1] 董中伟[1] 李岳[1] 

机构地区：[1]长春理工大学材料科学与工程学院,长春130022 [2]内蒙古民族大学,通辽028043

出　　处：《物理学报》2011年第3期431-435,共5页Acta Physica Sinica

基　　金：吉林省科技厅项目(批准号:20080510)资助的课题~~

摘　　要：本文报道了高压烧结透明低阻ZnO陶瓷的过程,解决了常压下烧结ZnO高阻不透明的问题.在5GPa,800℃下获得了最佳光电性能的低阻透明ZnO陶瓷,其透过率为49%左右,电阻率为0.57Ω·cm,禁带宽度为3.31eV,载流子浓度为8.36×1017cm-3,迁移率为23cm2·V-1·s-1,良好的n型导电性来自于Zni和Vo施主缺陷的贡献.本文的结果对ZnO陶瓷在紫外发光等光电子器件领域的应用具有重要意义.In this paper,the preparetion of transparent ZnO ceramic with with low resistivity by high pressure sintering was reported,and the problem of high resistivity and opaqueness for ZnO under atmospheric pressure sintering was solved. The ZnO ceramic of optimal photoelectronic performance with high transparency and low resistivity under the pressure of 5 GPa and at the temperature of 800℃ was obtained. The transmissivily is about 49% ,the electronic resistivity is 0. 57 Ω·cm, the width of band gap is 3. 31 eV,the carrier concentration is 8. 36 × 1017 cm-3 and the mobility is 23 cm2·V-1·s-1 . The excellent n-type electrical conductivity is attributed to the contribution of Zni and VO donor defect. The results of this work have important significance for ZnO ceramic application as photoelectronic components for ultraviolet emission.

关 键 词：高压 陶瓷 n-ZnO 透明 

分 类 号：TQ174.13[化学工程—陶瓷工业]