湿法冶金去除太阳能级硅中硼的研究  

Study on removal boron from solargrade silicon with hydrometallurgy

作　　者：汤培平[1] 刘瑞聪[1] 陈晓敏[1] 陈云霞[1] 朱丽[1] 刘宏宇[1] 王文宾[1] 金燕红[2] 

机构地区：[1]厦门大学化学化工学院,福建厦门361005 [2]厦门大学资产经营有限公司

出　　处：《无机盐工业》2011年第3期27-30,共4页Inorganic Chemicals Industry

摘　　要：湿法提纯作为冶金法制备太阳能级硅的前处理工序,可以去除大部分金属和硼杂质。研究了以氢氟酸-硫酸混合酸为浸出剂,有机溶剂甲醇作为后处理剂,去除硅粉中硼杂质的方法。采用电感耦合等离子体发射光谱仪(ICP)等对产品进行表征。酸浸过程优化工艺条件:硫酸质量分数为55%,氢氟酸质量分数为7%,酸浸温度为70℃、酸浸时间为4 h、液固质量比为8∶1。酸浸后可使硅粉中的硼杂质质量分数由6.893×10-6降至3.867×10-6,去除率为41.9%。在酸浸基础上采用有机溶剂甲醇作为后处理剂,杂质硼质量分数降至3.84×10-6,去除率为44.29%。从硼酸浸后形成的产物入手探索提高硼去除率的方法,实验验证了该方法的可行性,为研究湿法冶金预处理太阳能级硅提供了新的参考。As a pre-treatment unit for preparing solar-grade silicon （ SG - Si ）by metallurgic method, wet purification could remove most metallic impurities and non-metallic impurities, such as boron. Experiment researched a new method to remove boron from SG - Si with mixed hydrofluoric acid - sulfuric acid as leaching agent and with organic solvent methanol as post4reatment agent. Samples were characterized by ICP and other analysis methods. When SG - Si powder had been leached at optimized conditions as follows：mass fraction of sulfuric acid was 55% , mass fraction of hydrofluoric acid was 7% ,reaction temperature was 70 ℃ ,reaction time was 4 h,and liquid - solid mass ratio 8：1 ,it was found that mass fraction of impurity boron in SG - Si was reduced to 3. 867 × 10 -6 from 6. 893 × 10 -6 and the removal rate was 41.9% after acid leaching;on the basis of the former procedure, mass fraction of impurity boron was reduced to 3.84 × 10-6 and the removal rate was 44.29% when treated with organic solvent. Experiment proved the feasibility of the method and provided a new reference for researching on the pre-treatment of SG - Si by hydrometallurgy.

关 键 词：太阳能硅 湿法冶金 有机溶剂 提纯 

分 类 号：TF111.3[冶金工程—冶金物理化学]