808nm千瓦级高效大功率半导体激光光源  

808nm kW-output high-efficiency diode laser sources

作　　者：单肖楠[1] 刘云[1] 曹军胜[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所,吉林长春130033

出　　处：《光学精密工程》2011年第2期452-456,共5页Optics and Precision Engineering

基　　金：吉林省科技厅省长基金资助项日(No.20075001)

摘　　要：提出了一种新型光束整形技术,该技术通过平行平板玻璃堆实现光束的分割、平移、重排,从而改善半导体激光的光束质量。该试验采用自主设计的中心波长为808 nm,连续输出功率为60 W/bar,填充因子为30%,具有19个发光点,每个发光点尺寸为1μm×135μm的20层半导体激光叠阵,通过望远镜系统对慢轴方向进行扩束后用一个聚焦镜同时对快慢轴聚焦,最终在焦平面上得到了1 kW输出,且聚焦光斑达到1 mm×1 mm,耦合效率达到90%,基本满足激光熔覆和激光焊接的要求。A kind of beam shaping technique was presented to improve the beam quality of a semiconductor laser and to achieve the beam splitting,translating,and rearranging by a parallel plate glass stack.The experiment uses a 20-layer 808 nm semiconductor laser array designed by ourselves with the output power of 60 W per bar,19 light-emitting points of 1 μm×135 μm each and 30% filling factor to expand beam at a slow axis through a telescope system,and also uses a focusing lens to focus on both the slow axis and the fast one at the same time.Experiments show that the technique can achieve the 1 kW output power on the focal plane,focused spot of 1 mm×1 mm and coupling efficiency of 90%,which basically satisfies the needs of laser cladding and welding.

关 键 词：高功率激光器 半导体激光器 光束整形 

分 类 号：TN248.4[电子电信—物理电子学]