Littrow型光栅外腔半导体激光器的输出特性分析  

Output Characteristics of Littrow-Type Grating External Cavity Semiconductor Lasers

作　　者：雷平顺[1,2] 薛力芳[2] 何军[2] 曾华林[2] 付跃刚[1] 周燕[2] 

机构地区：[1]长春理工大学光电工程学院,吉林长春130021 [2]中国科学院半导体研究所,北京100083

出　　处：《激光与光电子学进展》2011年第3期17-21,共5页Laser & Optoelectronics Progress

基　　金：第二批中国博士后科学基金特别资助金(200902129)资助课题

摘　　要：在讨论光栅外腔半导体激光器理论的基础上,对影响Littrow型光栅外腔半导体激光器输出功率和线宽压窄的各种因素进行了数值模拟分析。研制了单纵模高质量激光输出的Littrow型光栅外腔半导体激光器,在工作电流为400 mA时,连续输出功率达到180 mW,线宽优于1MHz。The theory of grating external cavity semiconductor lasers is discussed, and the influences of different factors on the output power and linewidth reduction of the Littrow-type external cavity semiconductor lasers are numerically simulated. The Littrow-type grating external cavity semiconductor laser is set up, and single longitudinal mode and highly-equality laser output is realized. The continuous output power is achieved with 180 mW at working current of 400 mA and the snectrum linewidth is less than 1 MHz.

关 键 词：激光技术 外腔半导体激光器 输出功率 线宽压窄 

分 类 号：TN248.4[电子电信—物理电子学]