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作 者:邱锋 项金钟 孔金丞 余连杰 孔令德 王光华 李雄军 杨丽丽 李悰 姬荣斌
机构地区:[1]School of Physical Science and Technology,Yunnan University [2]Kunming Institute of Physics
出 处:《Journal of Semiconductors》2011年第3期26-30,共5页半导体学报(英文版)
基 金:Project supported by the National Natural Science Foundation of China(No.60576069)
摘 要:This paper reports the dark conductivity and photoconductivity of amorphous HgCdTe thin films deposited on an AlOsubstrate by RF magnetron sputtering.It is determined that dark conduction activation energy is 0.417 eV for the as-grown sample.Thermal quenching is absent for the as-grown sample during the testing temperature zone,but the reverse is true for the polycrystalline sample.Photosensitivity shows the maximum at 240 K for amorphous thin films,while it is higher for the as-grown sample than for polycrystalline thin films in the range from 170 to 300 K.The recombination mechanism is the monomolecular recombination process at room temperature,which is different from the low temperature range.Theμτ-product is low in the range of 10-10cm~2/V,which indicates that some defect states exist in the amorphous thin films.This paper reports the dark conductivity and photoconductivity of amorphous Hg0.78Cd0.22Te thin films deposited on an Al2O3 substrate by RF magnetron sputtering.It is determined that dark conduction activation energy is 0.417 eV for the as-grown sample.Thermal quenching is absent for the as-grown sample during the testing temperature zone,but the reverse is true for the polycrystalline sample.Photosensitivity shows the maximum at 240 K for amorphous thin films,while it is higher for the as-grown sample than for polycrystalline thin films in the range from 170 to 300 K.The recombination mechanism is the monomolecular recombination process at room temperature,which is different from the low temperature range.Theμτ-product is low in the range of 10-11-10-9 cm2/V,which indicates that some defect states exist in the amorphous thin films.
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