Numerical analysis of the self-heating effect in SGOI with a double step buried oxide  

作　　者：李斌 刘红侠 李劲 袁博 曹磊 

机构地区：[1]Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education,School of Microelectronics,Xidian University

出　　处：《Journal of Semiconductors》2011年第3期42-48,共7页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.60976068,60936005);the Cultivation Fund of the Key Scientific and Technical Innovation Project,Ministry of Education of China(No.708083);the Specialized Research Fund for the Doctoral Program of Higher Education,China(No.200807010010)

摘　　要：To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator（SGOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs）,this paper proposes a novel device called double step buried oxide（BOX） SGOI,investigates its electrical and thermal characteristics,and analyzes the effect of self-heating on its electrical parameters.During the simulation of the device,a low field mobility model for strained Si MOSFETs is established and reduced thermal conductivity resulting from phonon boundary scattering is considered.A comparative study of SGOI nMOSFETs with different BOX thicknesses under channel and different channel strains has been performed.By reducing moderately the BOX thickness under the channel,the channel temperature caused by the self-heating effect can be effectively reduced.Moreover,mobility degradation,off state current and a short-channel effect such as drain induced barrier lowering can be well suppressed.Therefore,SGOI MOSFETs with a thinner BOX under the channel can improve the overall performance and long-term reliability efficiently.To reduce the self-heating effect of strained Si grown on relaxed SiGe-on-insulator（SGOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs）,this paper proposes a novel device called double step buried oxide（BOX） SGOI,investigates its electrical and thermal characteristics,and analyzes the effect of self-heating on its electrical parameters.During the simulation of the device,a low field mobility model for strained Si MOSFETs is established and reduced thermal conductivity resulting from phonon boundary scattering is considered.A comparative study of SGOI nMOSFETs with different BOX thicknesses under channel and different channel strains has been performed.By reducing moderately the BOX thickness under the channel,the channel temperature caused by the self-heating effect can be effectively reduced.Moreover,mobility degradation,off state current and a short-channel effect such as drain induced barrier lowering can be well suppressed.Therefore,SGOI MOSFETs with a thinner BOX under the channel can improve the overall performance and long-term reliability efficiently.

关 键 词：self-heating effect step BOX SGOI mobility model numerical analysis 

分 类 号：TN304.01[电子电信—物理电子学]