GaN-based MSM photovoltaic ultraviolet detector structure modeling and its simulation  

作　　者：陈一仁 宋航 黎大兵 孙晓娟 李志明 蒋红 缪国庆 

机构地区：[1]Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2011年第3期61-65,共5页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.60976011,51072196,51072195);the National Basic Research Program of China(No.2011CB301901)

摘　　要：Based on the principles of metal-semiconductor-metal Schottky barrier photodetectors（MSM-PD）, using the carrier rate equations,the circuit simulation model of a GaN-based MSM photovoltaic ultraviolet detector is constructed through an appropriately equivalent process.By using the Pspice analytical function of Cadence soft on the model,the relationship between the photocurrent and the terminal voltage under different UV light powers is analyzed.The result shows that under the given UV power,the photocurrent increases and tends to become saturated gradually as the terminal voltage of the device increases,and that under different UV powers,the photocurrent increases with increasing incident power.Then the analysis of the relationship between the photocurrent and the terminal voltage under the different ratios of interdigital electrode space and width is carried out when the UV power is given.The results show that when the ratio of interdigital electrode space and width（L/W） equals 1,the photocurrent tends to be at a maximum.Based on the principles of metal-semiconductor-metal Schottky barrier photodetectors（MSM-PD）, using the carrier rate equations,the circuit simulation model of a GaN-based MSM photovoltaic ultraviolet detector is constructed through an appropriately equivalent process.By using the Pspice analytical function of Cadence soft on the model,the relationship between the photocurrent and the terminal voltage under different UV light powers is analyzed.The result shows that under the given UV power,the photocurrent increases and tends to become saturated gradually as the terminal voltage of the device increases,and that under different UV powers,the photocurrent increases with increasing incident power.Then the analysis of the relationship between the photocurrent and the terminal voltage under the different ratios of interdigital electrode space and width is carried out when the UV power is given.The results show that when the ratio of interdigital electrode space and width（L/W） equals 1,the photocurrent tends to be at a maximum.

关 键 词：MSM structure SIMULATION equivalent circuit ultraviolet detector 

分 类 号：TN23[电子电信—物理电子学]