渐变掺氮碳纳米管场的发射性能  

Field emission property of gradiently nitrogen-doped carbon nanotubes

作　　者：徐二阳[1] 王昆林[1] 韦进全[1] 朱宏伟[1] 李祯[1] 桂许春[1] 吴德海[1] 

机构地区：[1]清华大学机械工程系,先进成形制造教育部重点实验室,北京100084

出　　处：《材料热处理学报》2011年第2期1-4,共4页Transactions of Materials and Heat Treatment

基　　金：国家自然科学基金(50672047);清华大学基础研究基金

摘　　要：以二甲苯/吡啶为碳/氮源,二茂铁为催化剂,在800℃下,由化学气相沉积法(CVD)制得了直径为10～30 nm的掺氮碳纳米管(CNT)阵列。用扫描电镜、透射电镜和拉曼光谱对其形貌和结构进行了表征。发现该碳管阵列具有竹节状结构,其中的氮含量沿碳管管径方向呈渐变趋势。随着碳管中氮含量的增加,竹节长度减小。研究了阵列的场发射性能,结果表明该碳管阵列是一种优秀的场发射材料:开启场强为0.37 V/μm,阈值场强为0.9 V/μm,场增强因子为37700。Carbon nanotube（CNT） arrays,with diameter of 10-30 nm,doped with nitrogen were synthesized by thermal decomposition of xylene/pyridine/ferrocene at 800 ℃.SEM,TEM and Raman spectroscopy were used to characterize the as-produced sample.It is shown that the method produces a gradient of nitrogen concentration that modifies the CNTs from a hollow cylinder to a bamboo-shaped structure which contains a series of compartments whose lengths are gradually reduced as the nitrogen concentration increases.Field emission test on the as-grown nitrogen-doped CNTs suggests that they are good emitters with a turn-on and threshold field of 0.37 V/μm and 0.9 V/μm,respectively.

关 键 词：碳纳米管 渐变掺氮 场发射性能 

分 类 号：TB383[一般工业技术—材料科学与工程] TN104.3[电子电信—物理电子学]