制备CeO_2纳米涂层的重复性研究  

Study on CeO_2 Nano-coating Film Prepared Reproducibility

作　　者：郭志超[1] 吕昭[1] 

机构地区：[1]北京工业大学材料学院国家教育部功能材料重点实验室,北京100124

出　　处：《新乡学院学报》2011年第1期30-32,共3页Journal of Xinxiang University

基　　金：国家自然科学基金(50771003和50802004)

摘　　要：用MOD法制备CeO2纳米涂层薄膜,研究和分析了CeO2薄膜的成相重复性和表面重复性,得出了1 000℃为最佳烧结温度、烧结气氛中氧元素的摩尔百分含量为0.01%的条件;研究了不同烧结工艺对CeO2薄膜表面形貌的影响,发现随着烧结温度的提高和时间的延长,薄膜的晶粒增大,表面起伏增大,表面粗糙度也随之增大,60 min为最佳保温时间;前驱溶液的浓度也会影响薄膜的致密性,浓度过大会使薄膜出现孔洞。The nano-coating CeO2 films were deposited on Ni substrates by MOD method.The deposition phase and surface-phase reproducibility of film were researched.The optimized annealing temperature for CeO2 growth is 1 000 °C and the 0.01% mol Oxygen content is better condition.By the investigation of the film flatness at different deposition processes,it was found that the grain size is increased when the annealing temperature and time increase,60 min is suitable.The concentration of the precursor solution also influences the quality of the CeO2 film.It will have more holes when the precursor solution concentration becomes thicker.

关 键 词：MOD法 CeO2纳米涂层 最佳保温时间 相成分重复性 表面均匀重复性 

分 类 号：O484.1[理学—固体物理]