具有带隙结构的迟滞比较器电路设计  

Circuit Design of Hysteresis Comparator with Band-Gap Structure

作　　者：徐静萍[1] 

机构地区：[1]西安邮电学院电子工程学院,陕西西安710121

出　　处：《现代电子技术》2011年第6期160-162,共3页Modern Electronics Technique

基　　金：国家自然科学基金资助项目(60876023);西安邮电学院中青年基金项目资助(ZL2009-14)

摘　　要：基于LED驱动的微功耗DC-DC转换器,针对低压高稳定性的要求设计了一款具有带隙结构的迟滞比较器电路,它的最低输入电压为1.2 V,其核心电路有带隙基准比较器、射极跟随器和迟滞比较器。整个电路采用Bipolar工艺设计,利用HSpice软件对所设计的电路进行了仿真与验证。结果表明,迟滞比较器的迟滞电压为8 mV,翻转门限电压随输入电压和温度的变化均很小。According to the requirement of low voltage and high stability, a circuit for the hysteresis comparator with band-gap structure is designed based on micropower consumption DC-DC converter drived by LED. Its minimum input voltage is 1.2 V. Its core circuits consists of Band gap comparator, emitter follower and hysteresis comparator. The bipolar technology is adopted in the circuit design. The circuit designed with the tecnology was simulated and verified with HSpice software. The results show that the hysteresis voltage of the hysteresis comparator is 8 mV, and the variation of the overturn threshold voltage with input voltage and temperature is small.

关 键 词：DC-DC转换器 带隙基准 迟滞比较器 BIPOLAR 

分 类 号：TN402-34[电子电信—微电子学与固体电子学]