掺氟汞系1223相的结构与超导电性  

Structure and Superconductivity of 1223 Phase in F-doped Hg-based Superconductor

作　　者：高孝恢[1] 李洁[1] 肖慎修[2] 陈天朗[2] 

机构地区：[1]中南工业大学化学系,长沙410083 [2]四川联合大学化学系,成都610064

出　　处：《物理化学学报》1999年第10期877-882,共6页Acta Physico-Chimica Sinica

摘　　要：合成了掺氟汞基铜酸盐超导体 .研究证明氟进入了 1 2 2 3相 ,占据元胞中O( 3)的晶格位置 .掺氟烧结而不退火样品的超导临界温度Tc 为 1 33.8K ,比不掺氟烧结标准样品的Tc 提高约 2 2K ,显示氟掺杂能够使样品中载流子浓度nh 不经退火一步接近最佳值 .F代O( 3)收缩了CuO2 面与电荷储存层间距离及氟的电负性比氧大是提高Tc 的主要原因 .Hg based Hg Ba Ca Cu (O,F) superconductor was prepared. It was proved that F entered 1223 superconductive phase and located at O(3) lattice site.The critical temperature T c of the samples doped with fluoride but without annealling is as high as 133.8 K, which is ～22 K higher than that of Hg Ba Ca Cu O standard samples.With the substitution of F with O, the carrier′s concentration in the superconductor is nearly close to the optimum value, which leads T c of F doped samples increasing greatly.

关 键 词：汞基 氧氟铜酸盐 类钙钛矿 掺杂 超导体 1223相 

分 类 号：TM262[一般工业技术—材料科学与工程]