Design of 35 GHz 1 Watt GaAs pHEMT Power Amplifier MMIC  

作　　者：Bo Hong Wen-Bin Dou 

机构地区：[1]the State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China

出　　处：《Journal of Electronic Science and Technology》2011年第1期81-84,共4页电子科技学刊（英文版）

基　　金：supported by the Innovation Fund of State Key Lab of Millimeter Waves

摘　　要：By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.By using 0.15 μm GaAs pHEMT （pseudomorphic high electron mobility transistor） technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit （MMIC） is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency （PAE） of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.

关 键 词：GaAs pHEMT （pseudomorphic high electron mobility transistor） millimeter wave microwave monolithic integrated circuit power adde defficiency power amplifier. 

分 类 号：TN402[电子电信—微电子学与固体电子学] TN722.75