磁控溅射沉积Cu-W薄膜的特征及热处理的影响  

Characteristics of Cu-W Thin Films Deposited by Magnetron Sputtering and Effect of Heat-treatment

作　　者：周铖[1] 孙勇[1] 郭中正[1] 殷国祥[1] 彭明军[1] 

机构地区：[1]昆明理工大学云南省新材料制备与加工重点实验室,昆明650093

出　　处：《材料导报》2011年第6期97-101,共5页Materials Reports

基　　金：国家863计划项目(2009AA03Z512);云南省自然科学基金重点资助项目(2004E0004Z);云南省教育厅科学研究基金(09Y0091)

摘　　要：采用磁控共溅射法制备含钨1.51％～14．20％（原子分数，下同）的Cu-W合金薄膜，并用EDX、XRD、SEM、显微硬度仪和电阻仪研究了其成分、结构及性能。结果表明，添加W可显著细化Cu-W薄膜基体相晶粒，晶粒尺寸随W含量的增加而减小，Cu-W薄膜呈纳米晶结构。Cu-W薄膜中存在W在Cu中形成的fcc Cu（W）非平衡亚稳过饱和目溶体，固溶度随W含量的增加而提高，最大值为10．65％。与纯Cu膜对比发现，薄膜的显微硬度和电阻率总体上随W含量的增加而显著增大。经200℃、400℃及650℃热处理1h后，Cu—W薄膜基体相晶粒长大，EDX分析显示晶界处出现富W第二相；薄膜显微硬度降低，电阻率下降，降幅与退火温度呈正相关。添加W引起的晶粒细化效应以及退火中基体相晶粒度增大分别是Cu—W薄膜微观结构和性能形成及演变的主要原因。Cu-W alloy thin films with W content of 1.51%-14. 20% were deposited by magnetron co-sputtering. The composition, structure, properties of Cu-W thin films were investigated by EDX, XRD, SEM, microhardness instrument and resistivity meter. The results show that W addition leads to grain refinement significantly, and the grain size reduces with the W content increasing. Cu-W thin films possess fcc Cu（W） non-equilibrium metastable supersaturated solid solution, the W solubility increases with the incremental W concentration, and the maximum W solubility is 10. 65%. Comparison with pure Cu films, it can be found that the microhardness and electrical resistivity of Cu-W thin films increase with the adding of W concentration in the films generally. After heat treatment at 200℃, 400℃ and 650℃for lh, the grain sizes of the matrix phases of Cu-W films grow up, and the submicron W-rich second-phase is observed at the grain boundary of Cu-W films. Both of the microhardness and electrical resistivity of Cu- W thin films decrease, and the reduction extent has positive correlation with annealing temperature. It is considered that the formation and evolution of the microstructure and the properties of Cu-W thin films can be mainly attributed to the grain refining effect of W addition as well as the growth of matrix grain sizes in annealing process, respectively.

关 键 词：Cu—W合金薄膜 纳米晶结构 热处理 显微硬度 电阻率 

分 类 号：TB43[一般工业技术] TG146.411[一般工业技术—材料科学与工程]