注入电流对外腔半导体激光器边模抑制比的影响(英文)  

Influence of injected current on side-mode suppression ratio of external cavity semiconductor lasers

作　　者：何玉平[1] 周寒青[2] 李未[1] 

机构地区：[1]南昌工程学院理学系,江西南昌330099 [2]浙江工业大学理学院,浙江杭州310014

出　　处：《南昌工程学院学报》2011年第1期49-52,共4页Journal of Nanchang Institute of Technology

摘　　要：考虑半导体激光器(SL)、光纤光栅外腔(FGE)二者的共同作用,在确定光纤光栅外腔半导体激光器(FGESL)的激光纵模分布后,利用FGESL满足的多模速率方程,研究了注入电流对FGESL边模抑制比的影响.数值模拟的结果表明:FGESL的边模抑制比(SMSR)随注入电流的增大总体上呈现上升趋势,但其变化过程中有波动,在短外腔时尤其明显.Considering the common function of semiconductor laser（SL）and fiber grating external cavity（FGE）,we studied the effect of injected current on side-mode suppression ratio when the longitudinal mode distribution of fiber grating external semiconductor lasers（FGESL）is set with the multimode rate equations.The numerical simulation indicates that with the increase of injected current,the SMSR takes on a rising tendency but it has some oscillations during the course of rising,especially for the short external cavity.

关 键 词：光纤光栅外腔半导体激光器 注入电流 外腔长度 边模抑制比 

分 类 号：TN248.4[电子电信—物理电子学]