温度和强度对无偏压串联光折变晶体回路中高斯光束自偏转的影响  

Temperature and intensity effect on self-deflection of Gaussian beam in an unbiased serial photorefractive crystal circuit

作　　者：袁建法[1] 

机构地区：[1]长治学院电子信息与物理系,山西长治046011

出　　处：《量子电子学报》2010年第2期209-214,共6页Chinese Journal of Quantum Electronics

摘　　要：为了得到温度和强度对高斯光束在串联光折变晶体回路中自偏转的影响结果,假设一束暗孤子光束和一束高斯光束分别入射到串联光折变晶体回路中的两块晶体上,利用数值计算方法分析了暗孤子的最大光强和所处晶体温度变化对与明孤子匹配的高斯光束自偏转特性的影响。结果表明,高斯光束的偏转程度随暗孤子最大光强增加而增大,随晶体温度的升高而减小。这些结果对光控光器件、温控光器件的工程实现具有重要的参考价值。In order to obtain temperature and intensity effect on self-deflection of Gaussian beam in an unbiased serial photorefractive crystal circuit, assuming a Gaussian beam and a dark soliton beam are incident on the photorefractive crystal, respectively, effects of changing the temperature and intensity of dark solitons on the self-deflection of the match of Gaussian beam with one bright solitons are discussed by numerical calculation. The result shows that the bending distance of the Gauss beam centre increases with temperature rise, decreases as temperature continuously rises. All the results are useful in the engineering realization of the optical-control and thermo-control optical devices

关 键 词：非线性光学 光折变效应 空间孤子对 高斯光束 

分 类 号：O437[机械工程—光学工程]