半导体极性晶体膜中束缚磁极化子的自陷能  

Self-trapping energy of bound magnetopolaron in a polar slab of semiconductor

作　　者：王秀清[1] 

机构地区：[1]内蒙古民族大学物理与电子信息学院,内蒙古通辽028043

出　　处：《量子电子学报》2010年第2期242-246,共5页Chinese Journal of Quantum Electronics

基　　金：内蒙古自然科学基金(20080404MS0109);内蒙古教育厅项目(NJzy08085)

摘　　要：采用线性组合算符法和幺正变换方法,研究极性晶体膜中束缚磁极化子的自陷能随膜厚d的变化关系。得出束缚磁极化子的自陷能由两部分组成:第一部分是由于电子-体LO声子相互作用所引起的(E_(e-LO)^(tr)),第二部分则是电子-SO声子相互作用引起的。后者又包含两部分,分别是电子与极性膜中两支表面声子相互作用的贡献(E_(e-SO)^(tr)so(+),E_(e-SO)^(tr)so(-))。通过对KCl半导体膜的数值计算表明,E_(e-ph)^(tr)和磁极化子的振动频率λ随膜厚d的增加而减少;当膜厚大于5 nm时,总自陷能E_(e-ph)^(tr)趋于一稳定值。另外,由于稳恒磁场的存在,使磁极化子的自陷能增大,这主要是由于稳恒磁场的存在,使电子-声子间的相互作用改变而引起的.The relationship between the ground state energy and self-trapping energy（Ee-phtr） with the polar slab thickness of the bound magnetopolaron in a polar slab was studied by using the Huybrecht’s linear combination operator and unitary transformations method.Ee-phtr consists of two parts,one is Ee-LOtr,the other is Ee-SOtr,and Be-SOtr consists of two parts,one is Ee-SOtr（＋）,the other is Ee-SOtr（-）.Taking KC1 as an example,Ee-phtr andλall reduced with the increase of the slab thickness,and the self-trapping energy was stablized to a low level when the slab thickness was above 5 nm,while when there was a stable magnetic fild,it increased.The reason is probably the change of electron-phonon interaction in presence of stable magnetic field.

关 键 词：光电子学 束缚磁极化子 线性组合算符 自陷能 

分 类 号：O469[理学—凝聚态物理] O472.3[理学—电子物理学]