12%带宽S波段大功率速调管的研制  

Development of the S-Band High Power Klystron with Bandwidth of 12%

作　　者：王勇[1] 张健[1] 王颖[1] 张志强[1] 

机构地区：[1]中国科学院电子学研究所中国科学院高功率微波源与技术重点实验室,北京100190

出　　处：《真空电子技术》2010年第6期9-11,共3页Vacuum Electronics

摘　　要：中国科学院电子学研究所长期致力于宽带大功率速调管的研究,并不断取得速调管带宽的突破。在S波段,继成功突破10%和11%带宽之后,最近又研制成功了相对瞬时带宽大于12%的速调管[1],使该所在宽带速调管的研究领域,始终位于世界的领先行列。本文详细介绍了该12%带宽速调管的设计理念、数值模拟结果和测试结果。The development of broadband high power klystron has being done in the Institute of Electronics,Chinese Academy of Sciences（IECAS）,and the breakthrough of the bandwidth of klystron has been obtained continuously.In S-band,after the achievement of 10% and 11% bandwidth,the relative instantaneous bandwidth of 12% has been brought to success,which makes IECAS be in the lead of the world in the field of broadband klystron.The paper introduces the design,simulation and test results of this klystron in detail.

关 键 词：速调管 S波段 12%带宽 对腔 重叠模双间隙腔 

分 类 号：TN122[电子电信—物理电子学]