电子束蒸发Al_2O_3/SiO_2复合薄膜电学性能的研究  

Electrical property of Al_2O_3/SiO_2 multilayer films deposited by electron evaporation

作　　者：翁卫祥[1] 贾贞[1] 于光龙[1] 李昱[1] 郭太良[1] 

机构地区：[1]福州大学物理与信息工程学院,福建福州350108

出　　处：《福州大学学报（自然科学版）》2011年第1期67-71,共5页Journal of Fuzhou University(Natural Science Edition)

基　　金：国家"863"计划重大专项资助项目(2008AA03A313);福州大学博士基金资助项目(826768)

摘　　要：利用离子辅助电子束蒸发技术,在玻璃基底上以交替沉积的方式制备了Al2O3/SiO2叠层复合薄膜,单层介质膜膜厚分别选取54和16 nm,总厚度为560 nm.采用步进法测试得到金属电极/复合绝缘膜/金属电极(MIM)结构的I-V特性曲线,具体成分为CrCuCr/(Al2O3/SiO2)8/CrCuCr,相应的厚度为80 nm/560 nm/80nm,复合薄膜的平均击穿场强为2.7 MV.cm-1,较好地满足FED后栅结构中对介质膜耐压特性的要求.结合理论分析发现,Al2O3/SiO2复合薄膜在不同的场强条件下以某一种导通作为主要的导通机制,其低场强区服从准欧姆定律,随着场强升高,在不同的阶段分别以肖特基效应,普尔-弗兰凯尔效应和F-N效应为主.The mutilayer thin films of aluminum oxide（Al2O3） and silicon oxide（SiO2） were alternating deposited on glass substrates by ion beam assisted electron evaporation.The thickness of the films was 560 nm,and each layer of Al2O3 and SiO2 was 54 and 16 nm.Based on the metal-insulating-metal structure,the I-V curves of the CrCuCr/（Al2O3/SiO2）8/CrCuCr was obtained with the voltage stepping method.The breakdown field strength of the composite layer was 2.7 MV·cm-1,fulfilled the requirements of FED for its withstand voltage property.It is found that the multilayer thin films have different conduction mechanisms under the condition of various field strengths combined with theoretics,the conduction mechanism followed Ohm’s law in the low-field area,then as the field strength increases,the Schottky effect,Poole-Fulankaier effect and F-N effect are respectively regarded as the mian mechanism at different stages.

关 键 词：AL2O3 SIO2 复合薄膜 电子束蒸发 电学性能 导通机制 

分 类 号：TB43[一般工业技术]