非球面镜准直大功率半导体激光阵列远场特性  

Study on Collimating of Semiconductor Diode Laser

作　　者：庞晓林[1] 尧舜[1] 宋禹[1] 郎超[1] 王智勇[1] 

机构地区：[1]北京工业大学激光工程研究院国家产学研激光技术中心.北京100124

出　　处：《半导体光电》2011年第1期34-37,40,共5页Semiconductor Optoelectronics

摘　　要：针对目前采用非球面快慢轴准直镜准直的大功率半导体激光阵列的远场光束特性在理论上缺乏准确的描述,而常用的单一能量利用率光束发散角不能够准确地描述半导体激光器准直光束的特性,难以有效指导其后整形、聚焦等光学系统设计的问题,文章利用CCD成像结合图像处理手段对半导体激光阵列光束经过非球面快慢轴准直镜后的远场光束进行实验研究。实验结果表明,随着能量利用率选择不同快、慢轴远场发散角变化趋势有较大区别,在较高能量利用率条件下,快轴方向能量利用率的微小增加可导致光束质量的迅速劣化,对光学系统要求苛刻;而慢轴方向能量分布较为均匀,光学系统冗余量较大。At present, there is no precise analysis of the far-field characteristic of high power semiconductor laser array collimated by the non-spherical lens in theory, meanwhile , a single beam divergence angle associated with energy efficiency can not accurately describe the laser far-field characteristics and guide the subsequent shaping, focusing and other optical designs. Far-field characteristics were studied with CCD imaging and image processing on semiconductor laser array collimated by the non-spherical lens. The results show that there is a large difference between the fast-axis and slow-axis far-field divergence angle with different choices of energy utilizations. A small increase of the energy efficiency in fast-axis can lead to rapid deterioration of beam quality, while the energy distribution in slow-axis is relatively uniform and it does not need strict optical system.

关 键 词：半导体激光阵列 准直 发散角 CCD成像 

分 类 号：TN248.4[电子电信—物理电子学]