Cu掺杂对sol-gel法制备的ZnO∶Co薄膜发光特性的影响  

Effect of Cu Doping on the Photoluminescence of ZnO∶Co Thin Films Prepared by sol-gel Method

作　　者：段文倩[1] 徐明[1,2] 吴艳南[2] 董成军[2] 杜懋陆[1] 

机构地区：[1]西南民族大学电气信息工程学院&信息材料四川省重点实验室,成都610041 [2]四川师范大学物理与电子工程学院&固体物理研究所,成都610068

出　　处：《半导体光电》2011年第1期84-87,91,共5页Semiconductor Optoelectronics

基　　金：四川省教育厅基金项目(2006C020)

摘　　要：采用溶胶-凝胶法制备了Cu、Co共掺的Zn0.95-xCo0.05CuxO(x=0,0.01,0.03,0.05)薄膜,并用金相显微镜和X射线衍射(XRD)研究了样品薄膜的形貌和结构,结果发现掺杂量影响着衍射峰的强度和位置。测量了样品的室温光致发光谱(PL谱),所有样品均观察到紫外发光带和蓝光发光带,同时伴随有较弱的绿光发光带。微量Cu掺杂能够显著提高ZnO∶Co薄膜的发光强度,对样品的发光机制进行了讨论。（Cu,Co）-codoped ZnO thin films,Zn0.95-xCo0.05CuxO（x=0,0.01,0.03,0.05） thin films were prepared by sol-gel method.The morphology and structure of the thin films were investigated using metallographic microscopy and X-ray diffraction（XRD）.The results indicate that the doping does not change the crystal structure of ZnO,but affect the intensity and position of the diffraction peak.The photoluminescence（PL） spectra measured at room temperature show that the ultraviolet light and blue emittion accompanied by a weak green emission were observed for all samples.It was found that the PL intensity of（Co,Cu）-codoped ZnO films is stronger than that of Co single-doped ZnO films and could be well modulated by controlling the Cu concentration.It is thought that the near UV emission comes mainly from the band edge exciton transitions,while the dislocation defects caused by oxygen doping content level lead to the green luminescence peak,and the blue emission is due to the electron transition from the interstitial zinc level to the top of the valence band and from the bottom of the conduction band to the zinc vacancy defect level.

关 键 词：溶胶-凝胶 Zn0.95-xCo0.05CuxO薄膜 光致发光 

分 类 号：O484.41[理学—固体物理]