航天器典型悬浮导体结构深层放电现象的模拟试验研究  

Experimental simulation of deep discharging in typical floating conductor structures of spacecraft

作　　者：全荣辉[1] 张振龙[1] 韩建伟[1] 

机构地区：[1]中国科学院空间科学与应用研究中心,北京100190

出　　处：《航天器环境工程》2011年第1期21-24,共4页Spacecraft Environment Engineering

摘　　要：空间辐射环境中,由高能电子所引起的深层充放电现象是威胁航天器安全的重要因素之一。文章采用90Sr放射源模拟GEO电子环境,试验观测了电子辐照下几种含有悬浮导体的典型卫星模拟部件结构的深层充放电现象,比较了真空度、束流密度与温度对放电现象的影响。试验结果表明,深层放电现象的产生与部件结构密切相关,在一定环境条件下含有悬浮导体的结构即可产生放电现象。因此,航天器深层放电防护除了选择合适的介质材料外,要尽可能地避免悬浮导体的存在,同时还必须考虑真空度和温度的影响。In the space radiation environment,deep charging and discharging is one of the key factors threatening the safety of spacecraft.In this paper,the 90Sr radiation source was used to simulate the electron environment in GEO and several simulated samples of spacecraft floating conductor structure were tested under different degrees of vacuum,electron fluxes and temperatures.It is shown that the deep discharging is closely related to the structure,and some typical floating conductors could discharge under low charging level.Therefore,to protect satellite against deep charging and discharging effects,we should,besides proper selection of dielectrics,avoid the presence of floating conductor structure while considering the influence of vacuum and temperature.

关 键 词：航天器 深层充放电 悬浮导体 模拟试验 

分 类 号：TM203[一般工业技术—材料科学与工程] TM503.5[电气工程—电工理论与新技术]