Effects of Potential and Temperature on the Electrodeposited Porous Zinc Oxide Films  

作　　者：李军伟 刘志锋 

机构地区：[1]Department of Materials Science and Engineering, Tianjin Institute of Urban Construction

出　　处：《Journal of Wuhan University of Technology(Materials Science)》2011年第1期47-51,共5页武汉理工大学学报（材料科学英文版）

基　　金：Funded by the Key Project of Chinese Ministry of Education (No. 208008);China Postdoctoral Science Foundation Funded Project (No. 20080440674)

摘　　要：Porous ZnO films were prepared by electrodeposition method in zinc nitrate aqueous solution using ITO glass covered with polystyrene sphere （PS） colloidal crystal arrays as substrates. The preparation procedure includes two parts： deposition of ZnO in the interstices of the colloidal crystals and subsequent removal of the PS templates. The influences of deposition potential and temperature on the ZnO films were investigated. The ordered, uniform porous ZnO films with optical transmittance of approximately 63.6% at 600 nm could be obtained when the deposition potential and temperature were –1.1 V and 70 ℃, respectively. The optical band gap energy increased along with the absolute deposition potential and temperature, ranging from 3.33 to 3.43 eV and from 3.35 to 3.42 eV, respectively.Porous ZnO films were prepared by electrodeposition method in zinc nitrate aqueous solution using ITO glass covered with polystyrene sphere （PS） colloidal crystal arrays as substrates. The preparation procedure includes two parts： deposition of ZnO in the interstices of the colloidal crystals and subsequent removal of the PS templates. The influences of deposition potential and temperature on the ZnO films were investigated. The ordered, uniform porous ZnO films with optical transmittance of approximately 63.6% at 600 nm could be obtained when the deposition potential and temperature were –1.1 V and 70 ℃, respectively. The optical band gap energy increased along with the absolute deposition potential and temperature, ranging from 3.33 to 3.43 eV and from 3.35 to 3.42 eV, respectively.

关 键 词：porous ZnO film ELECTRODEPOSITION TEMPLATE band gap energy 

分 类 号：TB383.2[一般工业技术—材料科学与工程]