化学溶液法和超声化学法制备硫化镉薄膜  

PREPARATION OF CADMIUM SULFIDE SEMICONDUCTOR FILMS BY CHEMICAL SOLUTI ON GROW TH AND ULTRASONICAL CHEMISTRY METHOD

作　　者：崔海宁[1] 钟江帆 王荣[2] 汪冬梅[1] 王丽颖[1] 席时权[1] 

机构地区：[1]中国科学院长春应用化学研究所 [2]吉林工业大学

出　　处：《材料研究学报》1999年第4期419-422,共4页Chinese Journal of Materials Research

基　　金：国家自然科学基金;中国科学院院长基金

摘　　要：通过对用化学溶液法制备硫化镉薄膜的微观生长过程和机理的研究， 建立一种在溶液中进行超声波化学制备硫化镉半导体薄膜的方法． 用扫描电子显微镜对化学溶液法和超声化学法沉积的硫化镉薄膜的生长过程进行跟踪观察． 讨论了硫化镉薄膜的 ＵBased on studying the micro growth process and m echanism of preparation of cad mium sul phide ( Cd S) thin films by chemical bath deposition m ethod ,novel m ethod called ultrasonic chemistry methodhas been proposed for preparing Cd Sfilms by solution growth way . Scanning electron microscopy ( S E M)was used to analyses the micro growth process and m orphology at different deposition time . The transmis sion spectra of Cd Sthin films by using different deposition methods were recorded and discussed with ultravi olet visible spectrophotom eter .

关 键 词：超声波 化学溶液沉积 硫化镉 薄膜 

分 类 号：TN304.25[电子电信—物理电子学] TN304.055