CdSe薄膜的溶剂热制备及其光电化学性能研究  

The solvothermal synthesis and photoelectrochemical behavior of nanocrystalline CdSe films

作　　者：贾会敏[1] 陈雪武[2] 雷岩[1] 张文涵[2] 李静[1] 郑直[1] 

机构地区：[1]许昌学院表面微纳米材料研究所,许昌461000 [2]许昌学院化学化工学院,许昌461000

出　　处：《化工新型材料》2011年第3期42-43,60,共3页New Chemical Materials

基　　金：国家自然科学基金资助项目(20873118);教育部新世纪优秀人才支持计划(NCET-08-0665);河南省高校创新人才支持计划(2008HAS-TIT016);河南省教育厅自然科学研究项目(2008B150019and2009B150024)

摘　　要：以CdCl2.2.5H2O为镉源,以Se粉为硒源,在苄胺体系中,180℃溶剂热条件下制备了CdSe纳米晶薄膜。并用XRD、SEM、TEM、UV-vis等对产物进行了一系列的表征,结果表明在该条件下可以得到粒径在10~20nm、较为均匀的CdSe纳米晶薄膜。同时在标准的三电极体系下,测试了CdSe纳米晶薄膜电极的光电化学性能。在光强32mW/cm2的模拟太阳光的照射下,该电极的开路电压（Voc）为0.395V,光电流密度（Isc）为0.951mA/cm2,填充因子（FF）为0.51,该电池的光电转化效率η为0.6%。Nanocrystalline CdSe films was prepared by solvothermal method under benzylamine at 180 degree,with CdCl2.2.5H2O used as cadmium source,Se powder used as selenium source.The products were characterized by XRD,SEM,TEM,UV-vis and so on.The result indicated that the compactly CdSe film was composed of 10~20 nm CdSe nanoparticles in diameter.The electrochemical experiments were performed in a standard three-electrode configuration.In the case of the CdSe film electrode,a photocurrent of 0.951 mA/cm2,a fill factor of 0.51,an open circuit photovoltage of 0.395 V,and a conversion efficiency of 0.6% were obtained under a simulated solar illumination of 32 mW/cm2.

关 键 词：CDSE纳米晶 苄胺 溶剂热 光电化学性能 

分 类 号：TB383.1[一般工业技术—材料科学与工程]