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作 者:邓赞红[1,2] 方晓东[1,2] 陶汝华[1,2] 董伟伟[1,2] 周曙[1,2] 孟钢[1,2] 邵景珍[1,2]
机构地区:[1]中国科学院安徽光学精密机械研究所安徽光子器件与材料省级实验室,合肥230031 [2]中国科学院新型薄膜太阳电池重点实验室,合肥230031
出 处:《无机材料学报》2011年第3期281-284,共4页Journal of Inorganic Materials
基 金:安徽省自然科学基金(090414169);中国科学院合肥物质科学研究院知识创新工程青年人才领域前沿项目~~
摘 要:采用脉冲激光沉积法制备了CuAlO2薄膜.在沉积激光能量100~180mJ范围内原位沉积的薄膜并在N2气氛下900℃异位退火1h处理后,所有薄膜均为高度c轴取向的单相CuAlO2薄膜,晶粒尺寸~49nm.随着沉积激光能量的增大,薄膜厚度增加,表面颗粒尺寸明显增大,在可见光区的平均透射率下降.室温光致发光谱发现,CuAlO2薄膜在350nm附近有一个自由激子复合发光峰,说明在CuAlO2宽带隙半导体中存在直接带间跃迁,这对于该材料在光电子领域如发光二极管的应用具有重要意义.CuAlO2 films were prepared by pulsed laser deposition(PLD) on Al2O3(001).And the effect of deposition laser energy on the microstructure,morphologies and optical properties of the films were studied.The in-situ deposited films were amorphous in the deposition laser energy of 100 180mJ.After ex-situ annealed in N2 atmosphere at 900℃ for 1 h,all the films were single phase CuAlO2 with c-axis orientation and the crystal sizes were about 49nm.With the increase of deposition laser energy,the film thickness and surface particle sizes increased,while the visible light transmittance decreased.Room-temperature photoluminescence measurements of the CuAlO2 films deposited with laser energy of 100mJ and 180mJ only showed an ultraviolet near-band-edge emission peak at 350 nm(around 3.5 eV) in the range of 325 650 nm,which originated from the generation and recombination of electron-hole pairs,namely,excitons.This observation indicates the existence of direct transition-type band gap of this material,which is favorable for the optoelectronics applications such as light-emitting diodes(LEDs).
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