Phase evolution of tantalum nitride and tantalum carbide films with PBII parameters  

作　　者：LI Zhongwen GU Le TANG Guangze MA Xinxin SUN Mingren WANG Liqin 

机构地区：[1]School of Materials Science ＆ Engineering, Harbin Institute of Technology, Harbin 150001, China [2]School of Mechatronics Engineering, Harbm Institute of Technology, Harbin 150001, China [3]State Key lab of Advanced Welding Production Technology, Harbin Institute of Technology, Harbin 150001, China

出　　处：《Rare Metals》2011年第2期142-145,共4页稀有金属（英文版）

基　　金：supported by the National Basic Research Program of China (No. 2007CB607602);the Science Found for Distinguished Yong Scholars of Heilongjiang Province,China (No. JC200901);the National Natural Science Foundation of China (No. 50875058);the Program of Excellent Teams of Harbin Institute of Technology

摘　　要：Tantalum nitride and tantalum carbide films were fabricated using magnetron sputtering of tantalum followed by nitrogen and carbon plasma-based ion implantation （N-PBII and C-PBII）. The phase evolution and morphology of the films were studied using glancing angle X-ray diffraction （GXRD） and transmission electron microscopy （TEM）. It was found that the main phase in the tantalum nitride films was crystalline TaNo.1 whose grain size increases with increasing implantation voltage and phase content increases with increasing implantation dose. In the tantalum carbide film, the main phase was Ta2C. TaC phase also appeared as the implantation dose increased. XRD results from various glancing angles show that the phases with high nitrogen or carbon content, Ta4N5 and TaC, are present in the surface of the films. X-ray photoelectron spectra （XPS） from the tantalum carbide film reveal that the surface carbon content is higher than that of the inner film.Tantalum nitride and tantalum carbide films were fabricated using magnetron sputtering of tantalum followed by nitrogen and carbon plasma-based ion implantation （N-PBII and C-PBII）. The phase evolution and morphology of the films were studied using glancing angle X-ray diffraction （GXRD） and transmission electron microscopy （TEM）. It was found that the main phase in the tantalum nitride films was crystalline TaNo.1 whose grain size increases with increasing implantation voltage and phase content increases with increasing implantation dose. In the tantalum carbide film, the main phase was Ta2C. TaC phase also appeared as the implantation dose increased. XRD results from various glancing angles show that the phases with high nitrogen or carbon content, Ta4N5 and TaC, are present in the surface of the films. X-ray photoelectron spectra （XPS） from the tantalum carbide film reveal that the surface carbon content is higher than that of the inner film.

关 键 词：thin films tantalum nitride tantalum carbide phase composition magnetron sputtering ion implantation 

分 类 号：O484.1[理学—固体物理] TN405[理学—物理]