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机构地区:[1]School of Internet of Things Engineering,Jiangnan University [2]58th Research Institute,China Electronic Technology Group Corporation
出 处:《Tsinghua Science and Technology》2011年第2期157-163,共7页清华大学学报(自然科学版(英文版)
基 金:Supported by the National Natural Science Foundation of China(No. BK2007026);the 333 High-Level Personnel Training Project of Jiangsu Province (No. 2007124)
摘 要:An ultra-low power complementary metal-oxide-semiconductor (CMOS) front-end readout ASIC was developed for a portable digital radiation detector. The ASIC having a charge sensitive amplifier and a semi-Gaussian pulse-shaper was produced using the CSMC 0.5 μm DPDM process. The ENC noise of 363 e at 0 pF with a noise slope of 23 e/pF complies with the stringent low noise requirements. The peaking time was 250 ns at a 100 mV/fC conversion gain (detector capacitance is 20 pF). By operating this frontend readout ASIC in the weak inversion region, the ultra-low power dissipation is only 0.1 mW/channel (3.0 V) Simulations and test results suggest that this design gives lower power consumption than the front-end readout ASICs working in the strong inversion and is appropriate for the portable digital radiation detectors.An ultra-low power complementary metal-oxide-semiconductor (CMOS) front-end readout ASIC was developed for a portable digital radiation detector. The ASIC having a charge sensitive amplifier and a semi-Gaussian pulse-shaper was produced using the CSMC 0.5 μm DPDM process. The ENC noise of 363 e at 0 pF with a noise slope of 23 e/pF complies with the stringent low noise requirements. The peaking time was 250 ns at a 100 mV/fC conversion gain (detector capacitance is 20 pF). By operating this frontend readout ASIC in the weak inversion region, the ultra-low power dissipation is only 0.1 mW/channel (3.0 V) Simulations and test results suggest that this design gives lower power consumption than the front-end readout ASICs working in the strong inversion and is appropriate for the portable digital radiation detectors.
关 键 词:charge sensitive SHAPER readout circuit weak inversion region nested feedback loop
分 类 号:TN492[电子电信—微电子学与固体电子学] TL81[核科学技术—核技术及应用]
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