脉冲激光沉积法在多孔硅衬底上制备ZnS薄膜  

The Preparation of ZnS Thin Film on Porous Silicon Substrate by Pulsed Laser Deposition

作　　者：王彩凤[1] 胡波[2] 李清山[3] 

机构地区：[1]滨州学院物理与电子科学系/理论物理研究所,山东滨州256603 [2]滨州学院飞行学院,山东滨州256603 [3]鲁东大学物理与电子工程学院,山东烟台264025

出　　处：《滨州学院学报》2010年第6期71-74,共4页Journal of Binzhou University

基　　金：山东省自然科学基金资助项目(Y2002A09);滨州学院科研基金资助项目(BZXYG1001)

摘　　要：用电化学阳极氧化法制备了一定孔隙率的多孔硅样品，然后用脉冲激光沉积法以PS为衬底生长一层ZnS薄膜．用X射线衍射仪、扫描电子显微镜和荧光分光光度计分别表征了ZnS薄膜的结构、形貌和ZnS／PS复合膜的光致发光性质．XRD结果表明，制备的ZnS薄膜沿G—ZnS（111）方向择优生长，结晶质量良好，但衍射峰的半峰全宽较大；SEM图像显示，ZnS薄膜表面出现一些凹坑，这是衬底PS的表面粗糙所致．室温下的光致发光谱表明，沉积ZnS薄膜后，PS的发光峰蓝移．把ZnS的蓝绿光与PS的橙红光叠加，在可见光区450～700nm形成了一个较宽的光致发光谱带，ZnS／PS复合膜呈现较强的白光发射．Porous silicon （PS） sample with certain porosity by electrochemical anodization was prepared,and then ZnS thin film was deposited on the PS substrate by pulsed laser deposition （PLD）. X-ray diffractometer （XRD）, scanning electron microscopy （SEM） and fluorescence spectrophotometer were used to study the structure,morphology of ZnS thin film and photolumineseenee （PL） properties of ZnS/ PS composite. XRD result showed that, ZnS thin film was grown in preferred orientation along β-ZnS （111） direction with good crystalline quality while the full width at half maximum （FWHM） of the diffraction peak is large;SEM images showed that,there are some pits in the film surface which is due to the roughness of the PS surface. The photoluminescence （PL） spectra measured at room temperature showed that,a blue shift of the PS peak occurred after ZnS thin film was deposited compared with asprepared PS. Combining the blue-green emission from ZnS with the red emission from PS, a broad PL band in the visible region from 450 nm to 700 nm was obtained, and ZnS/PS composite exhibited intense white light emission.

关 键 词：脉冲激光沉积 光致发光 ZNS 多孔硅 

分 类 号：O484.41[理学—固体物理]