短沟道模型模拟集成电路的几何规划优化设计  

Optimal Design for Analog Integrated Circuits Based on Short-Channel Models via Geometric Programming

作　　者：李丹[1] 戎蒙恬[1] 殳国华[1] 

机构地区：[1]上海交通大学电子信息与电气工程学院,上海200240

出　　处：《上海交通大学学报》2011年第3期354-357,362,共5页Journal of Shanghai Jiaotong University

基　　金：上海-应用材料研究与发展基金资助项目(09700713900)

摘　　要：探讨了几何规划在基于短沟道模型的互补金属氧化物半导体(CMOS)电路中的应用.首先采用Level 1模型得到电路的初始规划,然后将所得元件值代入Hspice仿真程序,再从仿真输出的列表文件中取出各CMOS管的静态电压电流变量和等效小信号模型参数.将它们代入以修正因子为规划变量的几何规划算法,在前一次工作点附近搜索本次的最优设计.修正后的电路再次进行Hspice仿真.几何规划和仿真反复交替进行,直到最优化的目标值稳定.模拟集成电路的仿真实例表明,算法对短沟道模型电路是有效的.A method of applying geometric programming to complementary metal oxide semiconductor（CMOS） based on short-channel models is described.An original solution based on Level 1 model via geometric programming is obtained first.Then simulate the original circuit by Hspice and acquire important parameters of all CMOS transistors from the output list file.These parameters are used in adjusting software to search the adjusting factors and achieve a new solution near the previous one.Simulating and geometric programming iteratively until the objective of optimization keeps stable.A simulation example proves the algorithm is effective in short-channel techniques.

关 键 词：模拟集成电路 几何规划 短沟道模型 最优化设计 

分 类 号：TN431.1[电子电信—微电子学与固体电子学]