氧在阻氢薄膜TiC_x中的行为研究  

Lnvestigations on Oxygen Behaviors in the Hydrogen-resistance TiC_x Films

作　　者：姜辉[1] 

机构地区：[1]江苏盐城师范学院物理科学与电子技术学院,盐城224002

出　　处：《长春理工大学学报（自然科学版）》2010年第4期144-146,156,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)

摘　　要：采用磁控溅射和离子束混合技术制备不同C/Ti含量比的TiCx阻氢薄膜,并利用XPS测试手段分析氧在薄膜中的分布及存在方式,进而分析C/Ti含量比和H+辐照对氧行为的影响,以期求得在不影响TiCx薄膜阻氢性能的基础上有效降低薄膜中氧含量的途径,提高薄膜的抗氧化性能,延长薄膜的有效寿命。TiCx films,which ratio of C/Ti are different,were deposited with r.f.magnetron sputtering and ion beam mixing.X-ray photoelectron spectroscopy（XPS） method was used for characterization of the distribution and chemical bonding states of oxygen element in the TiCx films.Moreover,XPS was used for the analysis of the effect of C/Ti ratio and hydrogen irradiation.Through these results,an effective way to reduce oxygen content in TiCx films is intend to be found,which can improve the hydrogen-resistance characteristic and life of TiCx films.

关 键 词：TiCx薄膜 氧 XPS 

分 类 号：O484.4[理学—固体物理]