梯度掺杂结构GaN光电阴极表面的净化  

Cleaning of Gradient-Doping GaN Photocathode Surface

作　　者：李飙[1] 徐源[1] 常本康[1] 杜晓睛[2] 王晓晖[1] 高频[1] 张俊举[1] 

机构地区：[1]南京理工大学电子工程与光电技术学院,江苏南京210094 [2]重庆大学光电工程学院,重庆400030

出　　处：《中国激光》2011年第4期249-252,共4页Chinese Journal of Lasers

基　　金：国家自然科学基金(60871012,60701013);南京理工大学自主科研专项计划(2010ZYTS032)资助课题

摘　　要：对梯度掺杂结构GaN阴极表面进行了化学清洗,清洗后利用X射线光电子能谱仪(XPS)分析了阴极表面,分析表明化学清洗能有效去除阴极表面的油脂和加工中残存的无机附着物;然后在超高真空室内710℃下对阴极进行了高温退火清洁,去除化学清洗后残留在阴极表面的C、O等吸附物,使阴极表面达到制备高性能负电子亲和势(NEA)光电阴极所需的原子级清洁程度。最后通过阴极激活实验加以验证,结果证实化学处理后热退火方法能有效净化梯度掺杂结构GaN阴极表面。Successful cleaning procedures for gradient-doping GaN surface have been investigated and achieved.The chemical cleaning of the gradient-doping GaN photocathode surface is carried out.The analysis of the surface after the chemical cleaning with X-ray photoelectron spectroscopy（XPS） shows that the chemical cleaning can effectively remove the organic attachments,residues in the process on the surface.Subsequent annealing of the surface under ultra-high vacuum at temperature of 710 ℃ leads to a decrease in the residual carbon,so the photocathode can obtain the ideal atom clean surface for high-performance negative electron affinity（NEA） photocathode.Finally,the photocathode active experimental results confirm that thermal annealing after chemical treatment method can effectively clean the gradient-doping GaN photocathode surface.

关 键 词：光电子学 表面净化 X射线光电子能谱仪 梯度掺杂 GAN光电阴极 激活 

分 类 号：O484[理学—固体物理] TN205[理学—物理]