流延法制备ZnO-V_2O_5-Sb_2O_3基压敏电阻  

Fabrication of ZnO-V_2O_5-Sb_2O_3 Based Varistor Ceramics Fabricated by Tape-casting Method

作　　者：赵鸣[1] 田长生[2] 

机构地区：[1]内蒙古科技大学材料与冶金学院,内蒙古包头010410 [2]西北工业大学材料学院,陕西西安710072

出　　处：《压电与声光》2011年第2期264-267,271,共5页Piezoelectrics & Acoustooptics

基　　金：内蒙古自然基金资助项目(20080404MS0804)

摘　　要：通过显微组织观察和电性能测试等研究了制备工艺和样品厚度对流延法制备单层方形ZnO-V2O5-Sb2O3(ZnVSb)基压敏电阻的影响。在流延基础上,通过加压排胶和烧结可制得无翘曲、显微组织均匀且致密的样品。900℃、4 h烧结1 mm厚样品性能最佳:非线性系数及压敏电压分别为45 V/mm和600 V/mm。样品的非线性系数随厚度的减少而降低。The influences of fabrication process and sample thickness on the square-shaped single layer ZnO-V2O5-Sb2O3（ZnVSb） based varistors prepared by the tape-casting approach were studied using the microstructure observation and electrical property tests.Based on the tape-casting,the camber-free samples with homogeneous microsturcture and high density could be fabricated by burning-out the organic binder and sintering.Samples of 1 mm in thickness sintered at 900 ℃ for 4 h showed the optimum properties.The nonlinearity coefficient and the pressure-sensitive resistance of the samples were 45 V/mm and 600 V/mm respectively.The nonlinearity coefficient of the samples decreased with the reduction in thickness.

关 键 词：流延 ZNO 压敏电阻 制备工艺 厚度 

分 类 号：TN379[电子电信—物理电子学]