MnCO_3掺杂对BMT陶瓷介电性能的影响  

Effect of MnCO_3 Doping on the Microwave Dielectric Properties of BMT Microwave Ceramics

作　　者：彭森[1] 吴孟强[1] 李艳江[1] 毛宏[1] 张树人[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2011年第2期287-290,共4页Piezoelectrics & Acoustooptics

基　　金：四川省青年基金资助项目(JS0303001)

摘　　要：采用传统电子陶瓷工艺合成了MnCO3掺杂的Ba(Mg1/3Ta2/3)O3(BMT)微波介质陶瓷,并研究了MnCO3掺杂量对陶瓷微波介电性能的影响。实验结果发现,添加少量的MnCO3能改善BMT陶瓷的烧结性能,当w(MnCO3)=2%时,陶瓷致密化烧结温度由纯相时的1 650℃以上降至1 350℃,且表观密度提高到7.482 g/cm3以上,烧结体密度可达理论密度的98%,材料的微波性能达到最佳值:介电常数rε=25.09,品质因数与频率之积Q.f=99 000 GHz(8 GHz),谐振频率温度系数τf=0.5×10-6/℃。MnCO3 doped Ba（Mg1/3Ta2/3）O3（BMT） microwave dielectric ceramics were prepared using the conventional electronic ceramic process.The effects of MnCO3 doped amounts on the microwave dielectric properties of BMT ceramics were studied.It was found that the sinterability of BMT could be improved greatly by the addition of small amount of MnCO3.In comparison with pure BMT ceramics,the BMT ceramic doped with 2%（mass fraction） MnCO3 showed a lower sintering temperature decreasing from 1 650 ℃ above to1 350 ℃,a higher apparent density of above 7.482 g/cm3 could be reached;a dense BMT ceramic with 98% relative density and the best microwave dielectric properties could be realized with εr =25.09,Q·f=99 000（8 GHz）,τf =0.5×10-6/℃.

关 键 词：介电性能 烧结 掺杂 Ba(Mg1/3Ta2/3)O3 

分 类 号：TM277[一般工业技术—材料科学与工程]