高压处理对纳米碳化硅形貌的影响  

Influences of High Pressure Process on the Morphology of Nano-Silicon Carbide Crystal

作　　者：高文丽[1] 田旭[1] 陈丽英[1] 王禧艳[1] 

机构地区：[1]武汉理工大学理学院,湖北武汉430070

出　　处：《机电工程技术》2011年第3期80-83,111,共4页Mechanical & Electrical Engineering Technology

摘　　要：纳米科学技术是21世纪的三大科学技术之一,纳米半导体的性质就特别引人瞩目。介绍了纳米碳化硅在冷高压条件下的表面特性以及晶体在透射电镜下的微观结构。结果表明,晶体粒径随压力的增大而增大,纳米碳化硅的致密性得到提高。A nanometer science and technology is the 21st century one of three big science and technology,and the nanometer semiconductor's nature specially is conspicuous.This article introduced the nanometer silicon carbide's character of surface in cold-high pressure,and observed crystal microstructure under TEM.The result indicated that the crystal particle size increases along with the pressure increases.

关 键 词：高压 纳米碳化硅 粒径 

分 类 号：TQ13[化学工程—无机化工]