Influence of varied doping structure on photoemissive property of photocathode  

作　　者：牛军 张益军 常本康 熊雅娟 

机构地区：[1]School of Electronic Engineering and Optoelectronic Technology,Nanjing University of Science and Technology [2]Department of Electron and Electric Engineering,Nanyang Institute of Technology

出　　处：《Chinese Physics B》2011年第4期356-361,共6页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant No.60678043); the Research and Innovation Plan for Graduate Students of Jiangsu Higher Education Institutions of China (Grant No. CX09B-096Z)

摘　　要：The built-in electric fields within a varied doping GaAs photocathode may promote the transport of electrons from the bulk to the surface, thus the quantum efficiency of the cathode can be enhanced remarkably. But this enhancement, which might be due to the increase in either the number or the energy of electrons reaching the surface, is not clear at present. In this paper, the energy distributions of electrons in a varied doping photocathode and uniform doping photocathode before and after escaping from the cathode surface are analysed, and the number of electrons escaping from the surface in different cases is calculated for the two kinds of photocathodes. The results indicate that the varied doping structure can not only increase the number of electrons reaching the surface but also cause an offset of the electron energy distribution to high energy. That is the root reason for the enhancement of the quantum efficiency of a varied doping GaAs photocathode.The built-in electric fields within a varied doping GaAs photocathode may promote the transport of electrons from the bulk to the surface, thus the quantum efficiency of the cathode can be enhanced remarkably. But this enhancement, which might be due to the increase in either the number or the energy of electrons reaching the surface, is not clear at present. In this paper, the energy distributions of electrons in a varied doping photocathode and uniform doping photocathode before and after escaping from the cathode surface are analysed, and the number of electrons escaping from the surface in different cases is calculated for the two kinds of photocathodes. The results indicate that the varied doping structure can not only increase the number of electrons reaching the surface but also cause an offset of the electron energy distribution to high energy. That is the root reason for the enhancement of the quantum efficiency of a varied doping GaAs photocathode.

关 键 词：varied doping PHOTOCATHODE energy distribution quantum efficiency 

分 类 号：O462[理学—电子物理学]