硅基底上热解法生长CNT薄膜的强流脉冲发射特性  

Characteristics of intensity pulsed electron emission from carbon nanotube film grown on silicon substrate by pyrolysis of FePc

作　　者：曾凡光[1] 李昕[2] 左曙[2] 夏连胜[3] 谌怡[3] 刘星光[3] 张篁[3] 张锐[1] 

机构地区：[1]郑州航空工业管理学院数理系,河南郑州450015 [2]西安交通大学电子与信息工程学院,陕西西安710049 [3]中国工程物理研究院流体物理研究所,四川绵阳621900

出　　处：《功能材料》2011年第4期609-611,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51072184;50972132);航空科学基金资助项目(2009ZE55003);河南省基础与前沿技术研究计划资助项目(092300410139)

摘　　要：采用酞菁铁高温热解方法在直径为5cm的硅基底上生长了定向CNT薄膜,并对其强流脉冲发射特性进行了表征。测试结果表明,在单脉冲条件下,当宏观场强为11.7V/μm时,发射脉冲电流的峰值约为109.4A;而在双脉冲模式下,当第一脉冲峰值宏观场强为8.6V/μm,第二脉冲峰值宏观场强为5.4V/μm时,第一脉冲和第二脉冲峰值电流分别约为117.2和720.8A。第二电流脉冲的电流峰值出现放大效应,放大倍数约为6.15倍。Carbon nanotube（CNT） film was directly grown on silicon substrate with diameter of 5 cm by pyrolysis of FePc.The characteristics of directly grown CNT film in the way of intensity pulsed electron emission was investigated.When the electron emission was performed in the mode of single pulse,pulsed peak of emission current and the corresponding current density under a macro electric field of 11.7V/μm are 109.4A.In the mode of double pulse,under the macro electric field of 8.6V/μm for the first pulse and 5.4V/μm for the second pulse,the peak current are 117.2 and 720.8A,respectively.Current magnifying effect with a magnification of 6.15 was found in the second pulse.

关 键 词：热解法 碳纳米管薄膜 强流脉冲发射 峰值电流密度 

分 类 号：O462.4[理学—电子物理学]