A 150-nA 13.4-ppm/℃switched-capacitor CMOS sub-bandgap voltage reference  

作　　者：严伟 李文宏 刘冉 

机构地区：[1]State Key Laboratory of ASIC & Systems,Fudan University

出　　处：《Journal of Semiconductors》2011年第4期155-160,共6页半导体学报（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China(No2009AA011607)

摘　　要：A nanopower switched-capacitor CMOS sub-bandgap voltage reference has been implemented using a Chartered 035-μm 3.3-V/5-V dual gate mixed-signal CMOS process.The proposed circuit generates a precise sub-bandgap voltage of 1 V.The temperature coefficient of the output voltage is 13.4 ppm/℃with the temperature varying from -20 to 80℃.The proposed circuit operates properly with the supply voltage down to 1.3 V,and consumes 150 nA at room temperature.The line regulation is 0.27%/V.The power supply rejection ratio at 100 Hz and 1 MHz is -39 dB and -51 dB,respectively.The chip area is 0.2 mm2.A nanopower switched-capacitor CMOS sub-bandgap voltage reference has been implemented using a Chartered 035-μm 3.3-V/5-V dual gate mixed-signal CMOS process.The proposed circuit generates a precise sub-bandgap voltage of 1 V.The temperature coefficient of the output voltage is 13.4 ppm/℃with the temperature varying from -20 to 80℃.The proposed circuit operates properly with the supply voltage down to 1.3 V,and consumes 150 nA at room temperature.The line regulation is 0.27%/V.The power supply rejection ratio at 100 Hz and 1 MHz is -39 dB and -51 dB,respectively.The chip area is 0.2 mm2.

关 键 词：nanopower sub-bandgap SWITCHED-CAPACITOR voltage reference 

分 类 号：TN432[电子电信—微电子学与固体电子学]