Simple and low-cost fabrication of a metal nanoplug on various substrates by electroless deposition  

作　　者：程凯芳 王晓峰 王晓东 张加勇 马慧莉 陈小刚 刘波 宋志棠 封松林 杨富华 

机构地区：[1]Engineering Research Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences [2]State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences [3]Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2011年第4期170-174,共5页半导体学报（英文版）

基　　金：Project supported by the National High-Tech Research and Development Program of China(No2008AA031402);the National Natural Science Foundation of China(Nos60606024,61076077)

摘　　要：An electroless deposition（ELD） method is introduced to fabricate a metal nanoplug for its advantages of simplicity,low cost and auto-selectivity.It was demonstrated that nanoplugs of less than 50 nm in diameter can be fabricated by ELD nickel on various substrates,such as silicon,tungsten and titanium nitride.The main composition of the ELD nanoplug was characterized as nickel by an energy dispersive X-ray microanalyzer.A functional vertical phase-change random access memory（PCRAM） device with a heater diameter of around 9μm was fabricated by using the ELD method.TheⅠ-Ⅴcharacteristics demonstrated that the threshold current is only 90.8μA.This showed that the ELD process can satisfy the demands of PCRAM device application,as well as device performance improvement.The ELD process provides a promising method for the simple and low-cost fabrication of metal nanoplugs.An electroless deposition（ELD） method is introduced to fabricate a metal nanoplug for its advantages of simplicity,low cost and auto-selectivity.It was demonstrated that nanoplugs of less than 50 nm in diameter can be fabricated by ELD nickel on various substrates,such as silicon,tungsten and titanium nitride.The main composition of the ELD nanoplug was characterized as nickel by an energy dispersive X-ray microanalyzer.A functional vertical phase-change random access memory（PCRAM） device with a heater diameter of around 9μm was fabricated by using the ELD method.TheⅠ-Ⅴcharacteristics demonstrated that the threshold current is only 90.8μA.This showed that the ELD process can satisfy the demands of PCRAM device application,as well as device performance improvement.The ELD process provides a promising method for the simple and low-cost fabrication of metal nanoplugs.

关 键 词：electroless deposition nanoplug anodic aluminum oxide template 

分 类 号：TN304.05[电子电信—物理电子学]