ZnO纳米棒与Si(111)和Si(100)衬底的外延关系(英文)  

Epitaxial Relationship of ZnO Nanorods with Si(111)and Si(100) Substrates

作　　者：唐斌[1] 邓宏[2] 张强[1] 税正伟[1] 刘忠华[1] 

机构地区：[1]西南石油大学理学院,成都610500 [2]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《微纳电子技术》2011年第4期237-241,共5页Micronanoelectronic Technology

基　　金：the Research Foundation of Education Bureau of Sichuan Province of China (10ZB066);the Natural Science Foundation of Southwest Petroleum University of China (2010XJZ197)

摘　　要：运用热蒸发技术在Si(111)和Si(100)基片上制备了ZnO纳米棒。SEM表征显示,ZnO纳米棒的直径约100nm,长度均匀,大约3μm;XRD表征发现ZnO纳米棒沿[0001]晶向择优生长。通过实验结果与理论分析得出:对于Si(111)基片上的样品,大部分ZnO纳米棒沿6个对称方向生长,而且与基片之间的夹角为54.7°,ZnO与Si(111)的外延关系为[0001]ZnO‖[114]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[141]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[411]Si,或[0001]ZnO‖[4]Si。对于Si(100)基片上的样品,大部分ZnO纳米棒沿4个对称方向生长,与基片之间的夹角为70.5°,其外延关系为[0001]ZnO‖[114]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[14]Si,或[0001]ZnO‖[14]Si。通过比较分析得出Si基片可以控制ZnO纳米棒的生长方向。The zinc oxide（ZnO）nanorods were synthesized using aurum as the catalyst on the n-type Si（111）and Si（100）substrates with the thermal evaporation technique.The SEM result shows that the diameter of the ZnO nanorods is about 100 nm with uniform length of about 3 μm,and the XRD result indicates that the ZnO nanorods exhibit orientation.Through the experimental results and theory analysis,the majority of the nanorods on the silicon（111）substrate grow in one of the six directions at an angle of 54.7°off the substrate plane with the epitaxial relation of ZnO and Si（111）as [0001]ZnO‖[114]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[141]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[411]Si or [0001]ZnO‖Si.The majority of the nanorods on the Si（100）substrate grow in one of the four directions at an angle of 70.5° off the substrate plane with the epitaxial relation of ZnO and Si（100）as [0001]ZnO‖[114]Si,[0001]ZnO‖[4]Si,[0001]ZnO‖[14]Si or [0001]ZnO‖[14]Si.The comparison result indicates that the growing orientation of ZnO nanorods can be controlled by Si substrate.

关 键 词：ZNO纳米棒 热蒸发 外延生长 晶格常数 失配 

分 类 号：TN364.2[电子电信—物理电子学]